Import prepared process input for a MOS capacitor
Review the source and conversion details of prepared MOS input, then adopt it for a capacitor calculation or keep direct inputs.
Before you start
These steps apply to Cloud 2.1.2.10 and Windows 2.1.2.3.
Have a JSON file containing a successful prepared process MOS output ready. The imported input describes a uniform MOS capacitor substrate and an ideal SiO₂ oxide thickness.
On Cloud, stop the project runtime before running the device calculation and saving or opening project documents.
Import and review the prepared input
In the window header, open the product menu and choose vFactory > Wafer Process & Fab. Select Process models, then Device (MOS-C).
Select Import prepared process MOS input and choose the prepared JSON file.
Review source, sourceModel, sourceInputSha256 and sourceResultSha256 in the preview. Check conversion for the source window, units, polarity, doping and oxide thickness; check preparedInput for the MOS-C parameters.
Select Confirm prepared MOS input to adopt the previewed input. To retain the current direct input instead, select Keep direct MOS inputs.
Calculate and inspect the adopted input
Expand Process source provenance to inspect the adopted source record, ownerSha256 and sourceRevision.
Select Run MOS-C simulation. Read the LF/HF capacitance, surface-potential and semiconductor-charge plots and the convergence table.
To return to direct input, select Keep direct MOS inputs, edit MOS-C inputs (SI) and select Apply inputs.