Build a wafer process recipe

Set the materials, starting layers and process steps used by a wafer model.

Open the wafer recipe

From the product menu, select vFactory → Wafer Process & Fab, then select Process models. In Model, choose Wafer process. These steps apply to Cloud and Windows 2.1.2.3. The starting example gives you materials, layers and a process sequence to edit.

For the product menu and your first run, see the first-process guide linked below.

Set materials and starting layers

  1. Enter a Recipe name. Under Material coefficients, set each material ID and its D₀ (nm²/s) and Eₐ (eV) values. Select Add material to add another material.

  2. Under Initial layers · surface first, choose each layer’s material and enter its thickness in nm, cell count and concentration in cm⁻³. The first layer is the surface layer.

  3. Select Add bottom layer to append a layer below the existing layers.

Process models with Model set to Wafer process and the example recipe Planar layer example. Material coefficients lists Material 1 substrate (D₀ 10 nm²/s, Eₐ 0 eV) and Material 2 film (D₀ 2 nm²/s, Eₐ 0 eV), each with a note that layers or process steps use it, and an Add material button. Initial layers · surface first has one layer with material substrate, thickness 100 nm, 80 cells and concentration 1000000000000000 cm⁻³, and an Add bottom layer button.

The starting example has two materials and one surface layer. Change the material IDs and coefficients and the layer values here, or use Add material and Add bottom layer.

Changing a material ID updates its references in the recipe. A material used by a layer or process step stays available until those references are changed.

Add process steps

  1. Under Process sequence, select Add deposition, Add etch, Add diffusion or Add thermal ramp. New steps appear at the end of the sequence.

  2. Give each step a Step label and Duration (s). For deposition, choose the material, growth rate, new cells and deposited concentration. For etching, set a rate for each material.

  3. For diffusion, set the temperature and maximum time step. For a thermal ramp, set the starting and ending temperatures and maximum time step.

  4. For either diffusion step, choose the top and bottom boundary conditions. Choose No flux / closed or Fixed concentration; the latter also shows a concentration field.

  5. Select Run simulation to compute the recipe. Use Save input to keep the current inputs as JSON.

Process sequence of the example recipe with three steps. 1. deposition, Deposit doped film: Duration (s) 10, Deposit material film, growth rate 2 nm/s and 16 new cells. 2. diffusion, Anneal layers: Duration (s) 30, 1000 K, maximum time step 0.1 s, and No flux / closed as Top boundary and Bottom boundary. 3. etch, Selective film etch: Duration (s) 8, substrate etch rate 0.1 nm/s and film etch rate 1 nm/s. The buttons Add deposition, Add etch, Add diffusion, Add thermal ramp, Add ion implantation and Add CMP are also shown.

Each step has its own Step label, Duration (s) and step inputs. The diffusion step also sets Top boundary and Bottom boundary.

Run your first process model in vFactory

Example inputs are synthetic assumptions. Results simulate the supplied model, not measured production data.